![]() Then, the global optimization approach was carried out utilizing the multi-response optimizer considering the combination target of film formation rate, residual stress, dielectric constant, elastic modulus, fracture strain, refractive index. First of all, the Taguchi orthogonal experiment design and analysis was used to rank the influences of main process parameters on the quality characteristics, including radio frequency (RF) power, pressure, silane flow rate, ammonia flow rate and nitrogen flow rate. Therefore, an efficient global optimization approach for the process technology was proposed based on the Taguchi orthogonal experiment method considering muti-factor muti-responses. Process optimization towards specific application by conventional experiment design needs lots of work due to the interaction of muti quality and process parameters. However, the applicability of SiNx largely depends on the film’s general properties, including flexibility, deposition rate, residual stress, elastic modulus, fracture strain, dielectric constant, refraction index, etc. Low-temperature silicon nitride (SiNx) films deposited by plasma-enhanced chemical vapor deposition (PECVD) have huge application potential in the flexible display. Current results are corroborated by comparison to experimental values from literature. SiX3-SiH- and SiH2-involving reactions display significantly lower mean reverse activation energy (1–2 kcal/mol) than reactions with other products (10–13 kcal/mol), which is much smaller than the energy required to separate the reaction complex (14–15 kcal/mol), so they may not lead to decomposition. Hence, the two paths might be the most probable decomposition route of (chloro)trisilane. Among considered routes, formation of SiH4-zClz with SiX3-SiX (monosilane with silylsilylene) (X is H or Cl atom), or SiH2-zClz with Si2H6-圜ly (silylene with disilane) are similarly preferred in terms of calculated energetics, including activation energy. Three major decomposition paths are considered, by which byproducts of H2-zClz, SiH4-zClz, and SiH2-zClz can be formed. In this work, the chemical pathways for thermal decomposition of chlorinated trisilanes (Si3H8-xClx, where x = 0, 1, 2, and 8) were explored using density functional theory (DFT) calculations. However, the thermal decomposition may hinder their application. In the light of the current state-of-the-art, we offer perspectives for further developing these promising materials.Ĭhlorinated trisilanes are important precursors for low-temperature deposition of silicon nitride thin films. Here, we review and analyse strategies in the literature and the most promising solutions to identify the factors that limit the power conversion efficiency and long-term stability of lead-free tin-based perovskite solar cells. However, the lower solar-to-energy conversion efficiency and long-term stability issues are serious drawbacks that hinder the potential progression of these materials. Thanks to the foresight of scientists and their experience in lead-based halide perovskite preparation, remarkable results have been obtained in a short period of time using lead-free perovskite compositions. ![]() However, uncertainty about the potential toxicity of lead-based halide perovskite materials and their facile dissolution in water requires a search for new alternative perovskite-like materials. Current record efficiencies offer the promise to surpass those of silicon solar cells. This paper can guide the improvements in barrier performance.ĭue to their outstanding optoelectronic properties, lead-based halide perovskite materials have been applied as efficient photoactive materials in solution-processed solar cells. ![]() The results summarize how the device can improve barrier performance under external stress. Third, the introduction of a neutral plane as the middle layer decreases the strain. Second, controlling the configuration of the hybrid structure can prevent degradation due to cracks. However, stress engineering is required to achieve high performance TFEs for flexible devices, new materials and deposition methods.įirst, modulating the internal stress in TFEs should be considered to increase flexibility by adopting other layers that can reduce internal stress. We introduce various organic deposition methods and mechanisms for enhancing barrier performance. However, organic film should be combined with a hybrid structure for improved flexibility and longer lag time. Atomic layer deposited inorganic films have superior barrier performance and have advantages of excellent uniformity over large scales at relatively low deposition temperatures. Recent trends in thin film encapsulations (TFEs), fabricating organic/inorganic encapsulation films are reviewed.
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